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| GD25Q21b datasheet http://www.elm-tech.com
2 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash - content - page 1. f eatures --------------------------- --------------------------- ---------------------------- - -------------- 4 2. general description ------------------------------------------------------ - ---------------------- 5 3. memory organization --------------------------------------------------------- - ---------------- 6 4. device operation ----------------------------------------------------------------- - - - - - - - - - ------ - - 6 5. data protection ----------------------------------------------------------------------- - - - - - ------- - 7 6. status register -------------------------------------------------------------- - - - - - - - - - - - - - - - ------- - 9 7. commands description ------------------------------------------- --- - - - - - - - - - - - - - - - - - --------- - 10 table of id definition ---------- ------ ------------------------------------ - - - - - - - - - - - - - - - - - - - - - - ------------ - 1 3 7.1. write enable (wren) (06h) ---------------------------------------------------- - - - - - - - - - - - - ------- 1 4 7.2. write disable (wrdi) (04h) ------------------------------------------------------------- - - - - - - - - - - 1 4 7.3. write enable for volatile status register (50h) ---------- ---------- -------------- ------- ----- - - -- 1 5 7.4. read status register (rdsr) (05h or 35h) --------------------------------------------- - ------- 1 5 7.5. write status register (wrsr) (01h) -------------------------------------------------- - - - - - - ------ 1 6 7.6 . write status register (wrsr) (31h) ---------------------------------------------------------- --- 1 7 7.7. read data bytes (read) (03h) ------------------------------------------------ - - - - - - - - - - - - - ------- 1 8 7.8. read data bytes at higher speed (fast read) (0bh) ---------------------- - - - - - - - - - - - - - - ------- 1 8 7.9. dual output fast read (3bh) --------------------------------------------------------- - - - - - - - ------ 1 9 7.10. quad output fast read (6bh) ---------------------------------------------------------------------- 20 7.11. dual i/o fast read (bbh) ------------------------------------------------------------------ - - - - --- 20 7.12. quad i/o fast read (ebh) ------------------------------------------------------ - - - - - - - - - - - - - ------ 2 2 7.13. quad i/o word fast read (e7h) ------------------------------------------------------------------ 2 3 7. 14 . set burst with wrap (77h) ---------------------------------------------------------------- - - - - - - --- - 2 5 7.15. page program (pp) (02h) - -------------------------------------------------------------------------- 2 6 7.16. quad page program (32h) ---------- ---------------------- --------------------- ----- ----- - - - - ------- 2 7 7.17. sector erase (se) (20h) ---------- ------------------------------------------------ - - - - - - - - - - - - ------- 2 8 7.18. 32kb block erase (be) (52h) --------------------------------------------------------------------- 2 8 7.19. 64kb block erase (be) (d8h) ------------------------------------------------------ - - - - - - - - - ------ 2 9 7.20. chip erase (ce) (60/c7h) ---------- ---------------- -------------- ------- --- --- --- --- --- - - - - - - - - - --- 2 9 7.2 1 . deep power-down (dp) (b9h) ---------------------------------------------------------------- - --- - 30 7.22. release from deep power-down or high performance mode and read device id (rdi) (abh) 31 7.23. read manufacture id/device id (rems) (90h) ---------- -------- -------------- - --- ----- - ------- 3 2 7.24. read manufacture id/device id dual i/o (92h) ---------- -------- ----- -- --- --- --- -- - - --- - ------ 3 3 7.25. read manufacture id/device id quad i/o (94h) ---- -- -------------- ------- --- --- - - -- --- --- ---- 3 4 7.2 6 . read identification (rdid) (9fh) ------------------------------------------------------------- - --- - 3 5 3 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7.27. high performance mode (hpm) (a3h) --------------------------------------------- - - - - - - - - - ----- 36 7.28. erase security registers (44h) -------------------------------- ------------------------------- ------- 3 6 7.29. program security registers (42h) ---------------------------------- ------- ------- ------- ---- ------- 3 7 7.30. read security registers (48h) -------------------------------- ------ ------ ------ ------ ------ -------- 3 8 7.31. continuous read mode reset (crmr) (ffh) ---------------------------------------- --- --- ----- 3 9 7.32. program/erase suspend (pes) (75h) ---- ----------------------------- --- --- --- --- --- ---- ---------- 3 9 7. 33 . program/erase resume (per) (7ah) --------------------------------------------------------- - --- - 40 8 . electrical characteristics ------------------------------------------- - ------------------- 41 8 .1. power- on timing ------------------------------------------------------------------------------------- 41 8 .2. initial delivery state ---------------------------------------------------------------------------------- 41 8 .3. data retention and endurance ----------------------------------------------------------------------- 41 8 .4. latch up characteristics ----------------------------------------------------------------------------- 41 8 .5. abso lute maximum ratings ------------------------------------------------------------------------- 42 8 .6 . capacitance measurement co nditions -------------------------------------------------------- - --- - 42 8 .7. dc characteristics ----------------------------------------------------------------------------------- 4 3 8 .8. a c characteristics --------------------------------------------------------------------------- -------- 4 4 9 . ordering information --------------------------------------------------- --------------------- - 4 6 10 . package information ------------------------------------------- ------------------------------- - 4 7 10 .1. package sop8 150mil ------------------------------------------------ ---------------------------- 4 7 10 .2. package sop8 208mil ----------------------------------------------- ------------------------- ---- 4 8 10.3. package uson8 (3x2mm) ----------------------------------------------------------------------- 4 9 4 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 1. features ? 2m-bit serial flash - 256k-byte - 256 bytes per programmable page ? standard, dual, quad spi - standard spi: sclk, cs#, si, so, wp#, hold# - dual spi: sclk, cs#, io0, io1, wp#, hold# - quad spi: sclk, cs#, io0, io1, io2, io 3 ? high speed clock frequency - 104mhz for fast read with 30pf load - dual i/o data transfer up to 208mbits/s - quad i/o data transfer up to 416mbits/s ? software/hardware write protection - w rite protect all/portion of memory via software - enable/disable protection with wp# pin - top or bottom, sector or block selection ? program/erase speed - page program time: 0.35ms typical - sector erase time: 50ms typical - block e rase time: 0.18/0.25s typical - chip e rase time: 0.8s typical ? flexible architecture - sector of 4k-byte - block of 32/64k-byte ? low power consumption - 12 ma maximum active current - 5a maximum power down current ? single power supply voltage - full voltage range: 2.7~3.6v ? minimum 100,000 program/erase cycles ? advanced security features - power supply lock-down - 3512-byte security registers with otp locks - volatile and non-volatile status register bits http://www.elm-tech.com 5 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash pin name i / o description cs# i chip select input so (io1) i/o data output ( data input output 1 ) wp# (io2) i/o write protect input (data input output 2) vss ground si (io0) i/o data input ( data input output 0 ) sclk i serial clock input hold# (io3) i/o hold input (data input output 3) vcc power supply 2. general description the GD25Q21b serial flash supports the standard serial peripheral interface (spi), and a high performance dual/quad output as well as dual/quad spi: serial clock, chip select, serial data i/o0 (si), i/o1 (so), i/o2 (wp#), and i/o3 (hold#). spi clock frequencies of up to 104mhz are supported allowing equivalent clock rates of 208mhz for dual output & dual i/o read command, and 416mhz for quad output & quad i/o read command. connection diagram http://www.elm-tech.com 8-lead sop 8-lead uso n pin description spi command & control logic high voltage generators page address latch / counter status register write control logic byte address latch / counter column decode and 256 - byte page buffer write protect logic and row decode flash memory cs # sclk si( io 0) so( io 1) hold #( io 3) wp #( io 2) block diagram 6 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash each device has each block has each sector has each page has 256 k 64/32k 4k 256 bytes 1k 256/128 16 - pages 64 16/8 - - sectors 4 /8 - - - blocks 3. memory organization block sector address range 3 64 03f000h 03ffffh ----- ----- ----- ----- ----- ----- 2 47 02f000h 02ffffh ----- ----- ----- 32 020000h 020fffh 1 31 01f000h 01ffffh ----- ----- ----- 16 010000h 010fffh 0 15 00f000h 00ffffh ----- ----- ----- 0 000000h 000fffh GD25Q21b GD25Q21b 64k bytes block sector architecture 4 . device operation spi mode standard spi the GD25Q21b feature a serial peripheral interface on 4 signals bus: serial clock (sclk), chip select (cs#), serial data input (si) and serial data output (so). both spi bus mode 0 and 3 are supported. input data is latched on the rising edge of sclk and data shifts out on the falling edge of sclk. dual spi the GD25Q21b supports dual spi operation when using the dual output fast read and dual i/o fast read (3bh and bbh) commands. these commands allow data to be transferred to or from the device at two times the rate of the standard spi. when using the dual spi command the si and so pins become bidirectional i/o pins: io0 and io1. uniform block sector architecture 7 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash quad spi the GD25Q21b supports quad spi operation when using the quad output fast read, quad i/o fast read, quad i/o word fast read, quad page program (6bh, ebh, e7h, 32h) commands. these commands allow data to be transferred to or from the device at four times the rate of the standard spi. when using the quad spi command the si and so pins become bidirectional i/o pins: io0 and io1, and wp# and hold# pins become io2 and io3. quad spi commands require the non-volatile quad enable bit (qe) in status register to be set. hold the hold# signal goes low to stop any serial communications with the device, but doesnt stop the operation of write status register, programming, or erasing in progress. the operation of hold, need cs# keep low, and starts on falling edge of the hold# signal, with sclk signal being low (if sclk is not being low, hold operation will not start until sclk being low). the hold condition ends on rising edge of hold# signal with sclk being low (if sclk is not being low, hold operation will not end until sclk being low). the so is high impedance, both si and sclk dont care during the hold operation, if cs# drives high during hold operation, it will reset the internal logic of the device. to re-start communication with chip, the hold# must be at high and then cs# must be at low. figure 1. hold condition hold hold cs # sclk hold # 5 . data protection the GD25Q21b provides the following data protection methods: ? write enable (wren) command: the wren command is set the write enable latch bit (wel). the wel bit will return to reset by the following situation: - power-up - write disable (wrdi) - write status register (wrsr) - page program (pp) - sector erase (se) / block erase (be) / chip erase (ce) - erase security register / program security register ? software protection mode: the block protect (bp4, bp3, bp2, bp1, bp0) bits define the section of the memory array that can be read but not change. ? hardware protection mode: wp# going low to protected the bp0~bp4 bits and srp0~1 bits. ? deep power-down mode: in deep power-down mode, all commands are ignored except the release from deep power-down mode command. 8 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash status register content memory content bp4 bp3 bp2 bp1 bp0 blocks addresses density portion 0 0 0 none none none none 0 0 0 1 3 030000h-03ffffh 64 kb upper 1/4 0 0 1 0 2 and 3 020000h-03ffffh 128 kb upper 1/2 0 1 0 1 0 00 0000h-00ffffh 64 kb lower 1/4 0 1 1 0 0 and 1 0 00000h-01ffffh 128k b lower 1/2 0 1 1 0 to 3 0 00000h-03ffffh 256k b all 1 0 0 0 none none none none 1 0 0 0 1 3 03 f 000h-03ffffh 4 kb upper 1/64 1 0 0 1 0 3 03 e 000h-03ffffh 8 kb upper 1/32 1 0 0 1 1 3 03c000h- 03ffffh 16 kb upper 1/16 1 0 1 0 3 038000h- 03ffffh 32k b upper 1/8 1 0 1 1 0 3 038000h- 03ffffh 32kb upper 1/8 1 1 0 0 1 0 000000h-000fffh 4kb lower 1/64 1 1 0 1 0 0 000000h-001fffh 8kb lower 1/32 1 1 0 1 1 0 000000h-003fffh 16kb lower 1/16 1 1 1 0 0 000000h-007fffh 32kb lower 1/8 1 1 1 1 0 0 000000h-007fffh 32kb lower 1/8 1 1 1 1 0 to 3 000000h-03ffffh 256kb all table1.0 GD25Q21b protected area size (cmp=0) status register content memory content bp4 bp3 bp2 bp1 bp0 blocks addresses density portion 0 0 0 0 to 3 000000h-03ffffh 256kb all 0 0 0 1 0 to 2 000000h-02ffffh 192 kb lower 3/4 0 0 1 0 0 and 1 000000h-01ffffh 128 kb lower 1/2 0 1 0 1 1 to 3 010000h-03ffffh 192 kb upper 3/4 0 1 1 0 2 and 3 020000h-03ffffh 128 k b upper 1/ 2 0 1 1 none none none none 1 0 0 0 0 to 3 000000h-03ffffh 256k b all 1 0 0 0 1 0 to 3 000000h-03efffh 252 kb lower 63/64 1 0 0 1 0 0 to 3 000000h-03dfffh 2 48 kb lower 31/32 1 0 0 1 1 0 to 3 000000h-03bfffh 240 kb lower 15/ 16 1 0 1 0 0 to 3 000000h-037fffh 224 kb lower 7/ 8 1 0 1 1 0 0 to 3 000000h-037fffh 224 kb lower 7/ 8 1 1 0 0 1 0 to 3 001000h-03ffffh 252 kb u pper 63 /64 1 1 0 1 0 0 to 3 002000h-03ffffh 248 kb u pper 31 / 32 1 1 0 1 1 0 to 3 004000h-03ffffh 24 0kb u pper 15 / 16 1 1 1 0 0 to 3 008000h-03ffffh 224 kb u pper 7 / 8 1 1 1 1 0 0 to 3 008000h-03ffffh 224 kb u pper 7 / 8 1 1 1 1 none none none none table1.0. GD25Q21b protected area size (cmp=1) 9 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 6 . status register the status and control bits of the status register are as fo llows: w ip bit. the write in progress (wip) bit indicates whether the memory is busy in program/erase/write status register progress. when wip bit sets to 1, means the device is busy in program/erase/write status register progress, when wip bit sets 0, means the device is not in program/erase/write status register progress. wel bit. the write enable latch (wel) bit indicates the status of the internal write enable latch. when set to 1 the internal write enable latch is set, when set to 0 the internal write enable latch is reset and no write status register, program or erase command is accepted. bp4, bp3, bp2, bp1, bp 0 bits. the block protect (bp4, bp3, bp2, bp1, bp0) bits are non-volatile (default value is 0). they define the size of the area to be software protected against program and erase commands. these bits are written with the write status register (wrsr) command. when the block protect (bp4, bp3, bp2, bp1, bp0) bits are set to 1, the relevant memory area (as defined in table1).becomes protected against page program (pp), sector erase (se) and block erase (be) commands. the block protect (bp4, bp3, bp2, bp1, bp0) bits can be written provided that the hardware protected mode has not been set. the chip erase (ce) command is executed, if the block protect (bp4, bp3, bp2, bp1, bp0) bits are set to none protected. srp1, srp0 bits. the status register protect (srp1 and srp0) bits are non-volatile read/write bits in the status register. the srp bits control the method of write protection: software protection, hardware protection, power supply lock- down or one time programmable protection. s15 s14 s13 s12 s11 s10 s9 s8 sus cmp lb3 lb2 lb1 hpf qe srp1 s7 s6 s5 s4 s3 s2 s1 s0 srp0 bp4 bp3 bp2 bp1 bp0 wel wip srp1 srp 0 #wp status register description 0 0 software protected wp# pin has no control. the status register can be written to after a write enable command, wel=1.(default) 0 1 0 hardware protected when wp# pin is low the status register locked and can not be written to. 0 1 1 hardware unprotected when wp# pin is high the status register is unlocked and can be written to after a write enable command, wel=1. 1 0 power supply lock-down(1) status register is protected and can not be written to again until the next power-down, power-up cycle. 1 1 one time program(2) status register is permanently protected and can not be written to. note: (1). when srp1, srp0= (1, 0), a power-down, power-up cycle will change srp1, srp0 to (0, 0) state. (2). this feature is available on special order. please contact elm for details. 10 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. commands description all commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first rising edge of sclk after cs# is driven low. then, the one-byte command code must be shifted in to the device, most significant bit first on si, each bit being latched on the rising edges of sclk. see table2, every command sequence starts with a one-byte command code. depending on the command, this might be followed by address bytes, or by data bytes, or by both or none. cs# must be driven high after the last bit of the command sequence has been shifted in. for the command of read, fast read, read status register or release from deep power-down, and read device id, the shifted-in command sequence is followed by a data- out sequence. cs# can be driven high after any bit of the data-out sequence is being shifted out. for the command of page program, sector erase, block erase, chip erase, write status register, write enable, write disable or deep power-down command, cs# must be driven high exactly at a byte boundary, otherwise the command is rejected, and is not executed. that is cs# must driven high when the number of clock pulses after cs# being driven low is an exact multiple of eight. for page program, if at any time the input byte is not a full byte, nothing will happen and wel will not be reset. qe bit. the quad enable (qe) bit is a non-volatile read/write bit in the status register that allows quad operation. when the qe bit is set to 0 (default) the wp# pin and hold# pin are enable. when the qe pin is set to 1, the quad io2 and io3 pins are enabled. (the qe bit should never be set to 1 during standard spi or dual spi operation if the wp# or hold# pins are tied directly to the power supply or ground). hpf bit. the high performance flag (hpf) bit indicates the status of high performance mode (hpm). when hpf bit sets to 1, it means the device is in high performance mode, when hpf bit sets 0 (default), it means the device is not in high performance mode. lb3, lb2, lb1, bits. the lb3, lb2, lb1, bits are non-volatile one time program (otp) bits in status register (s13-s11) that provide the write protect control and status to the security registers. the default state of lb3-lb1 are 0, the security registers are unlocked. the lb3-lb1 bits can be set to 1 individually using the write register instruction. the lb3-lb1 bits are one time programmable, once its set to 1, the security registers will become read-only permanently. cmp bit. the cmp bit is a non-volatile read/write bit in the status register (s14). it is used in conjunction the bp4- bp0 bits to provide more flexibility for the array protection. please see the status registers memory protection table for details. the default setting is cmp=0. sus bit. the sus bit is read only bit in the status register (s15) that is set to 1 after executing an erase/program suspend (75h) command. the sus bit is cleared to 0 by erase/program resume (7ah) command as well as a power-down, power-up cycle. 11 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash command name byte 1 byte 2 byte 3 byte 4 byte 5 byte 6 n-bytes write enable 06h write disable 04h volatile sr write enable 50h read status register 05h (s7-s0) (continuous) read status register-1 3 5h (s15-s8) (continuous) write status register 01h (s7-s0) (s15-s8) (1) write status register-1 3 1h (s15-s8) read data 03h a23-a16 a15-a8 a7-a0 (d7-d0) (next byte) (continuous) fast read 0bh a23-a16 a15-a8 a7-a0 dummy (d7-d0) (continuous) dual output fast read 3bh a23-a16 a15-a8 a7-a0 dummy d7-d0 (2) (continuous) dual i/o fast read bbh a23 -a8 (3) a7-a0 m7 -m0 (3) (d7-d0) (2) (continuous) quad output fast read 6bh a23-a16 a15-a8 a7-a0 dummy (d7 -d0) (4) (continuous) quad i/o fast read ebh a23-a0 m7 -m0 (5) dummy (6) (d7-d0) (4) (continuous) quad i/o word fast read (8) e7h a23-a0 m7 -m0 (5) dummy (7) (d7-d0) (4) (continuous) continuous read reset ffh page program 02h a23-a16 a15-a8 a7-a0 d7-d0 next byte quad page program 32h a23-a16 a15-a8 a7-a0 d7-d0 (4) sector erase 20h a23-a16 a15-a8 a7-a0 block erase (32k) 52h a23-a16 a15-a8 a7-a0 block erase (64k) d8h a23-a16 a15-a8 a7-a0 chip erase c7/60h set burst with wrap 77h dummy (10) w7-w0 program/erase suspend 75h program/erase resume 7ah deep power-down b9h release from deep power-down, and read device id abh dummy dummy dummy (did7- did0) (continuous) release from deep power-down abh manufacturer/ device id 90h dummy dummy 00h (mid7- mid0) (did7- did0) (continuous) manufacturer/ device id by dual i/o 92h a23-a8 a7-a0, m7-m0 (mid7-mid0) (did7-did0 (continuous) manufacturer/ device id by quad i/o 94h a23-a0, m7-m0 dummy (11) (mid7- mid0) (did7-did0) (continuous) read identification 9fh (m7-m0) (jdid15- jdid8) (jdid7- jdid0) (continuous) table2. commands 12 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash note: (1) write status register (01h) normally, write status register (01h) is used to write both lower status register and higher status register; however, if cs# goes up at the eighth bit of the data byte, the data byte would be written as lower byte of status register, without changing the higher byte of status register. (2) dual output data io0 = (d6, d4, d2, d0) io1 = (d7, d5, d3, d1) (3) dual input address io0 = a22, a20, a18, a16, a14, a12, a10, a8 a6, a4, a2, a0, m6, m4, m2, m0 io1 = a23, a21, a19, a17, a15, a13, a11, a9 a7, a5, a3, a1, m7, m5, m3, m1 (4) quad output data io0 = (d4, d0, ..) io1 = (d5, d1, ..) io2 = (d6, d2, ..) io3 = (d7, d3,..) (5) quad input address io0 = a20, a16, a12, a8, a4, a0, m4, m0 io1 = a21, a17, a13, a9, a5, a1, m5, m1 io2 = a22, a18, a14, a10, a6, a2, m6, m2 io3 = a23, a19, a15, a11, a7, a3, m7, m3 (6) fast read quad i/o data io0 = (x, x, x, x, d4, d0,) io1 = (x, x, x, x, d5, d1,) io2 = (x, x, x, x, d6, d2,) io3 = (x, x, x, x, d7, d3,) command name byte 1 byte 2 byte 3 byte 4 byte 5 byte 6 n-bytes high performance mode a3h dummy dummy dummy erase security registers (9) 44h a23-a16 a15-a8 a7-a0 program security registers (9) 42h a23-a16 a15-a8 a7-a0 (d7-d0) (d7-d0) read security registers (9) 48h a23-a16 a15-a8 a7-a0 dummy (d7-d0) 13 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash table of id definitions: GD25Q21b operation code m7-m0 id15-id8 id7-id0 9fh c8 40 12 90h c8 11 abh 11 (7) fast word read quad i/o data io0 = (x, x, d4, d0,) io1 = (x, x, d5, d1,) io2 = (x, x, d6, d2,) io3 = (x, x, d7, d3,) (8) fast word read quad i/o data: the lowest address bit must be 0. (9) security registers address: security register1: a23-a16=00h, a15-a9=0001000b, a8-a0= byte address; security register2: a23-a16=00h, a15-a9=0010000b, a8-a0= byte address; security register3: a23-a16=00h, a15-a9=0011000b, a8-a0= byte address. (10) dummy bits and wrap bits io0 = (x, x, x, x, x, x, w4, x) io1 = (x, x, x, x, x, x, w5, x) io2 = (x, x, x, x, x, x, w6, x) io3 = (x, x, x, x, x, x, w7, x) (11) address, continuous read mode bits, dummy bits, manufacture id and device id io0 = (a20, a16, a12, a8, a4, a0, m4, m0, x, x, x, x, mid4, mid0, did4, did0, ) io1 = (a21, a17, a13, a9, a5, a1, m5, m1, x, x, x, x, mid5, mid1, did5, did1, ) io2 = (a22, a18, a14, a10, a6, a2, m6, m2, x, x, x, x, mid6, mid2, did6, did2, ) io3 = (a23, a19, a15, a11, a7, a3, m7, m3, x, x, x, x, mid7, mid3, did7, did3, ) 14 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7.1 . write enable (wren)(06h) the write enable (wren) command is for setting the write enable latch (wel) bit. the write enable latch (wel) bit must be set prior to every page program (pp), sector erase (se), block erase (be), chip erase (ce) and write status register (wrsr), program security register, erase security register command. the write enable (wren) command sequence: cs# goes low sending the write enable command cs# goes high. command 0 1 2 3 4 5 6 7 06h cs# sclk si so high-z 7.2. write disable (wrdi) (04h) the write disable command is for resetting the write enable latch (wel) bit. the write disable command sequence: cs# goes low sending the write disable command cs# goes high. the wel bit is reset by following condition: power-up and upon completion of the write status register, page program, sector erase, block erase, chip erase, program security register, erase security register commands. command 0 1 2 3 4 5 6 7 04h cs# sclk si so high-z figure 2. write enable sequence diagram figure 3. write disable sequence diagram 15 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7.3 . write enable for volatile status register (50h) the non-volatile status register bits can also be written to as volatile bits. this gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical non- volatile bit write cycles or affecting the endurance of the status register non-volatile bits. the write enable for volatile status register command must be issued prior to a write status register command. the write enable for volatile status register command will not set the write enable latch bit, it is only valid for the write status register command to change the volatile status register bit values. figure 4. write enable for volatile status register sequence diagram cs# sclk command(50h) si so 0 1 2 3 4 5 6 7 high -z figure 5. read status register sequence diagram command 0 1 2 3 4 5 6 7 05 h or 35 h cs # sclk si so high -z 8 9 10 11 12 13 14 15 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 msb s7~s 0 or s 15 ~s 8 out s7~s 0 or s 15 ~s 8 out msb 7.4. read status register (rdsr) (05h or 35h) the read status register (rdsr) command is for reading the status register. the status register may be read at any time, even while a program, erase or write status register cycle is in progress. when one of these cycles is in progress, it is recommended to check the write in progress (wip) bit before sending a new command to the device. it is also possible to read the status register continuously. for command code 05h, the so will output status register bits s7~s0. the command code 35h, the so will output status register bits s15~s8. 16 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash figure 6. write status register sequence diagram command 0 1 2 3 4 5 6 7 01h cs# sclk si so high-z 8 9 10 11 12 13 14 15 msb 7 6 5 4 3 2 1 0 status register in 16 17 18 19 20 21 22 23 15 14 13 12 11 10 9 8 7.5. write status register (wrsr) (01h) the write status register (wrsr) command allows new values to be written to the status register. before it can be accepted, a write enable (wren) command must previously have been executed. after the write enable (wren) command has been decoded and executed, the device sets the write enable latch (wel). the write status register (wrsr) (01h) command has no effect on s15, s10, s1 and s0 of the status register. cs# must be driven high after the eighth or sixteen bit of the data byte has been latched in. if not, the write status register (wrsr) command is not executed. as soon as cs# is driven high, the self-timed write status register cycle (whose duration is t w ) is initiated. while the write status register cycle is in progress, the status register may still be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed write status register cycle, and is 0 when it is completed. when the cycle is completed, the write enable latch (wel) is reset. to write non-volatile status register bits, a standard write enable (06h) instruction must previously have been executed for the device to accept the write status register instruction. once write enabled, the instruction is entered by driving cs# low, sending the instruction code 01h, and then writing the status register data byte. to write volatile status register bits, a write enable for volatile status register (50h) instruction must have been executed prior to the write status register instruction (status register bit wel remains 0). however, srp1 and lb3, lb2, lb1 can not be changed from 1 to 0 because of the otp protection for these bits. upon power off, the volatile status register bit values will be lost, and the non-volatile status register bit values will be restored when power on again. the write status register (wrsr) command allows the user to change the values of the block protect (bp3, bp2, bp1, bp0) bits, to define the size of the area that is to be treated as read-only, as defined in table1. the write status register (wrsr) command also allows the user to set or reset the status register protect (srp1 and srp0) bits in accordance with the write protect (wp#) signal. the status register protect (srp1 and srp0) bits and write protect (wp#) signal allow the device to be put in the hardware protected mode. the write status register (wrsr) command is not executed once the hardware protected mode is entered. 17 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7.6. write status register (wrsr) (31h) the write status register (wrsr) command allows new values to be written to the status register. before it can be accepted, a write enable (wren) command must previously have been executed. after the write enable (wren) command has been decoded and executed, the device sets the write enable latch (wel). the write status register (wrsr) command (31h) has no effect on s15 and s10 of the status register. cs# must be driven high after the eighth bit of the data byte has been latched in. if not, the write status register (wrsr) command is not executed. as soon as cs# is driven high, the self-timed write status register cycle (whose duration is t w ) is initiated. while the write status register cycle is in progress, the status register may still be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed write status register cycle, and is 0 when it is completed. when the cycle is completed, the write enable latch (wel) is reset. to write non-volatile status register bits, a standard write enable (06h) instruction must previously have been executed for the device to accept the write status register instruction. once write enabled, the instruction is entered by driving cs# low, sending the instruction code 31h, and then writing the status register data byte. to write volatile status register bits, a write enable for volatile status register (50h) instruction must have been executed prior to the write status register instruction (status register bit wel remains 0). however, srp1 and lb3, lb2, lb1 can not be changed from 1 to 0 because of the otp protection for these bits. upon power off, the volatile status register bit values will be lost, and the non-volatile status register bit values will be restored when power on again. the write status register (wrsr) command allows the user to change the values of the block protect (bp4, bp3, bp2, bp1, and bp0) bits, to define the size of the area that is to be treated as read-only, as defined in table1. the write status register (wrsr) command also allows the user to set or reset the status register protect (srp1 and srp0) bits in accordance with the write protect (wp#) signal. the status register protect (srp1 and srp0) bits and write protect (wp#) signal allow the device to be put in the hardware protected mode. the write status register (wrsr) command is not executed once the hardware protected mode is entered. figure 7. write status register sequence diagram command 0 1 2 3 4 5 6 7 31 h cs # sclk si so high -z 8 9 10 11 12 13 14 15 msb status register in 16 17 18 19 20 21 22 23 14 13 12 11 10 9 15 8 18 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7.7. read data bytes (read) (03h) the read data bytes (read) command is followed by a 3-byte address (a23-a0), each bit being latched-in during the rising edge of sclk. then the memory content, at that address, is shifted out on so, each bit being shifted out, at a max frequency f r , during the falling edge of sclk. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single read data bytes (read) command. any read data bytes (read) command, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. figure 8. read data bytes sequence diagram command 0 1 2 3 4 5 6 7 03 h cs # sclk si so high -z 8 9 10 28 29 30 31 32 msb 3 2 1 0 34 35 36 37 33 23 22 21 7 6 5 4 3 2 1 0 38 39 24 - bit address msb data out 1 data out 2 7.8. read data bytes at higher speed (fast read) (0bh) the read data bytes at higher speed (fast read) command is for quickly reading data out. it is followed by a 3-byte address (a23-a0) and a dummy byte, each bit being latched-in during the rising edge of sclk. then the memory content, at that address, is shifted out on so, each bit being shifted out, at a max frequency f c , during the falling edge of sclk. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. figure 9. read data bytes at higher speed sequence diagram 19 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 9 . dual output fast read (3bh) the dual output fast read command is followed by 3-byte address (a23-a0) and a dummy byte, each bit being latched in during the rising edge of sclk, then the memory contents are shifted out 2-bit per clock cycle from si and so. the command sequence is shown in followed figure10. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. figure 10. dual output fast read sequence diagram 20 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 1 0 . quad output fast read (6bh) the quad output fast read command is followed by 3-byte address (a23-a0) and a dummy byte, each bit being latched in during the rising edge of sclk, then the memory contents are shifted out 4-bit per clock cycle from io3, io2, io1 and io0. the command sequence is shown in followed figure11. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. figure 11. quad output fast read sequence diagram command 0 1 2 3 4 5 6 7 6bh cs # sclk si( io 0) so( io 1) high -z 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24 - bit address 34 35 36 37 33 1 5 1 5 1 5 1 38 39 byte1 32 42 43 44 45 41 46 47 40 5 dummy clocks 0 4 0 4 0 4 0 4 4 5 wp #( io 2) high -z hold #( io 3) high -z cs # sclk si( io 0) so( io 1) wp #( io 2) hold #( io 3) 2 6 2 6 2 6 2 6 6 3 7 3 7 3 7 3 7 7 byte2 byte3 byte4 7. 1 1 . dual i/o fast read (bbh) the dual i/o fast read command is similar to the dual output fast read command but with the capability to input the 3-byte address (a23-0) and a continuous read mode byte 2-bit per clock by si and so, each bit being latched in during the rising edge of sclk, then the memory contents are shifted out 2-bit per clock cycle from si and so. the command sequence is shown in followed figure12. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. to ensure optimum performance the high performance mode (hpm) command (a3h) must be executed once, prior to the dual i/o fast read command. dual i/o fast read with continuous read mode the dual i/o fast read command can further reduce command overhead through setting the continuous read mode bits (m7-0) after the input 3-byte address (a23-a0). if the continuous read mode bits (m7-0) =axh, then the next dual i/o fast read command (after cs# is raised and then lowered) does not require the bbh command code. the command sequence is shown in followed figure13. if the continuous read mode bits (m7-0) are any value other than axh, the next command requires the first bbh command code, thus 21 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash figure 12. dual i/o fast read sequence diagram (m7-0 = 0xh or not axh) command 0 1 2 3 4 5 6 7 bbh cs # sclk si( io 0) so( io 1) 8 9 10 11 12 13 14 15 6 4 2 0 6 4 2 0 16 17 18 19 20 21 22 23 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 a 23 - 16 a 15 -8 a7-0 m7-0 cs # 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 si( io 0) so( io 1) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 sclk 6 7 byte1 byte2 byte3 byte4 figure 13. dual i/o fast read sequence diagram (m7-0 = axh) 0 1 2 3 4 5 6 7 cs # sclk 8 9 10 11 12 13 14 15 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 a 23 - 16 a 15 -8 a7-0 m7-0 cs # 23 24 25 26 27 28 29 30 31 si( io 0) so( io 1) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 sclk 6 7 byte1 byte2 byte3 byte4 15 16 17 18 19 20 21 22 returning to normal operation. a continuous read mode reset command can be used to reset (m7-0) before issuing normal command. 22 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 1 2 . quad i/o fast read (ebh) the quad i/o fast read command is similar to the dual i/o fast read command but with the capability to input the 3-byte address (a23-0) and a continuous read mode byte and 4-dummy clock 4-bit per clock by io0, io1, io2, io3, each bit being latched in during the rising edge of sclk, then the memory contents are shifted out 4-bit per clock cycle from io0, io1, io2, io3. the command sequence is shown in followed figure14. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the quad enable bit (qe) of status register (s9) must be set to enable for the quad i/o fast read command. to ensure optimum performance the high performance mode (hpm) command (a3h) must be executed once, prior to the quad i/o fast read command. quad i/o fast read with continuous read mode the quad i/o fast read command can further reduce command overhead through setting the continuous read mode bits (m7-0) after the input 3-byte address (a23-a0). if the continuous read mode bits (m7-0) =axh, then the next quad i/o fast read command (after cs# is raised and then lowered) does not require the ebh command code. the command sequence is shown in followed figure15. if the continuous read mode bits (m7-0) are any value other than axh, the next command requires the first ebh command code, thus returning to normal operation. a continuous read mode reset command can be used to reset (m7-0) before issuing normal command. figure 14. quad i/o fast read sequence diagram (m7-0 = 0xh or not axh) command 0 1 2 3 4 5 6 7 ebh cs # sclk si( io 0) so( io 1) 8 9 10 11 12 13 14 15 4 0 4 0 4 0 4 0 16 17 18 19 20 21 22 23 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 a 23 - 16 a 15 -8 a7-0 m7-0 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 wp #( io 2) hold #( io 3) 4 5 6 7 dummy byte1 byte2 figure 15. quad i/o fast read sequence diagram (m7-0 = axh) 0 1 2 3 4 5 6 7 cs # sclk 8 9 10 11 12 13 14 15 si( io 0) so( io 1) wp #( io 2) hold #( io 3) 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 4 5 6 7 a 23 - 16 a 15 -8 a7-0 m7-0 dummy byte1 byte2 23 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash quad i/o fast read with 8/16/32/64-byte wrap around in standard spi mode the quad i/o fast read command can be used to access a specific portion within a page by issuing set burst with wrap (77h) commands prior to ebh. the set burst with wrap (77h) command can either enable or disable the wrap around feature for the following ebh commands. when wrap around is enabled, the data being accessed can be limited to either an 8/16/32/64-byte section of a 256-byte page. the output data starts at the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary automatically until cs# is pulled high to terminate the command. the burst with wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. the set burst with wrap command allows three wrap bits w6-w4 to be set. the w4 bit is used to enable or disable the wrap around operation while w6-w5 is used to specify the length of the wrap around section within a page. 7. 1 3 . quad i/o word fast read (e7h) the quad i/o word fast read command is similar to the quad i/o fast read command except that the lowest address bit (a0) must equal 0 and only 2-dummy clock. the command sequence is shown in followed figure16. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the quad enable bit (qe) of status register (s9) must be set to enable for the quad i/o word fast read command. to ensure optimum performance the high performance mode (hpm) command (a3h) must be executed once, prior to the quad i/o word fast read command. quad i/o word fast read with continuous read mode the quad i/o word fast read command can further reduce command overhead through setting the continuous read mode bits (m7-0) after the input 3-byte address (a23-a0). if the continuous read mode bits (m7-0) =axh, then the next quad i/o word fast read command (after cs# is raised and then lowered) does not require the e7h command code. the command sequence is shown in followed figure17. if the continuous read mode bits (m7-0) are any value other than axh, the next command requires the first e7h command code, thus returning to normal operation. a continuous read mode reset command can be used to reset (m7-0) before issuing normal command. figure 16. quad i/o word fast read sequence diagram (m7-0 = 0xh or not axh) command 0 1 2 3 4 5 6 7 e7h cs # sclk si( io 0) so( io 1) 8 9 10 11 12 13 14 15 4 0 4 0 4 0 4 0 16 17 18 19 20 21 22 23 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 a 23 - 16 a 15 -8 a7-0 m7-0 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 wp #( io 2) hold #( io 3) 4 5 6 7 dummy byte1 byte2 4 0 5 1 6 2 7 3 byte3 24 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash figure 17. quad i/o word fast read sequence diagram (m7-0 = axh) 0 1 2 3 4 5 6 7 cs # sclk 8 9 10 11 12 13 14 15 si( io 0) so( io 1) wp #( io 2) hold #( io 3) 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 4 5 6 7 a 23 - 16 a 15 -8 a7-0 m7-0 dummy byte1 byte2 4 0 5 1 6 2 7 3 byte3 quad i/o word fast read with 8/16/32/64-byte wrap around in standard spi mode the quad i/o word fast read command can be used to access a specific portion within a page by issuing set burst with wrap (77h) commands prior to e7h. the set burst with wrap (77h) command can either enable or disable the wrap around feature for the following e7h commands. when wrap around is enabled, the data being accessed can be limited to either an 8/16/32/64-byte section of a 256-byte page. the output data starts at the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary automatically until cs# is pulled high to terminate the command. the burst with wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. the set burst with wrap command allows three wrap bits w6-w4 to be set. the w4 bit is used to enable or disable the wrap around operation while w6-w5 is used to specify the length of the wrap around section within a page. 25 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash w6, w5 w4=0 w4=1 (default) wrap around wrap length wrap around wrap length 0, 0 yes 8-byte no n/a 0, 1 yes 16 -byte no n/a 1, 0 yes 32 -byte no n/a 1, 1 yes 64 -byte no n/a if the w6-w4 bits are set by the set burst with wrap command, all the following quad i/o fast read and quad i/o word fast read command will use the w6-w4 setting to access the 8/16/32/64-byte section within any page. to exit the wrap around function and return to normal read operation, another set burst with wrap command should be issued to set w4=1. 7. 1 4 . set burst with wrap (77h) the set burst with wrap command is used in conjunction with quad i/o fast read and quad i/o word fast read command to access a fixed length of 8/16/32/64-byte section within a 256-byte page, in standard spi mode. the set burst with wrap command sequence: cs# goes low send set burst with wrap command send 24 dummy bits send 8 bits wrap bits cs# goes high. figure 18. set burst with wrap sequence diagram command 0 1 2 3 4 5 6 7 77 h cs # sclk si( io 0) so( io 1) 8 9 10 11 12 13 14 15 x x x x x x 4 x x x x x x x 5 x w6-w4 x x x x x x 6 x x x x x x x x x wp #( io 2) hold #( io 3) 26 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 1 5 . page program (pp) (02h) the page program (pp) command is for programming the memory. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit before sending the page program command. the page program (pp) command is entered by driving cs# low, followed by the command code, three address bytes and at least one data byte on si. if the 8 least significant address bits (a7-a0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (a7-a0) are all zero). cs# must be driven low for the entire duration of the sequence. the page program command sequence: cs# goes low sending page program command 3-byte address on si at least 1 byte data on si cs# goes high. the command sequence is shown in figure19. if more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. if less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. cs# must be driven high after the eighth bit of the last data byte has been latched in; otherwise the page program (pp) command is not executed. as soon as cs# is driven high, the self-timed page program cycle (whose duration is t pp ) is initiated. while the page program cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed page program cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a page program (pp) command applied to a page which is protected by the block protect (bp4, bp3, bp2, bp1, bp0) is not executed. figure 19. page program sequence diagram 27 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 1 6 . quad page program (32h) the quad page program command is for programming the memory using four pins: io0, io1, io2, and io3. to use quad page program the quad enable in status register bit9 must be set (qe=1). a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit before sending the page program command. the quad page program command is entered by driving cs# low, followed by the command code (32h), three address bytes and at least one data byte on io pins. the command sequence is shown in figure20. if more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. if less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. cs# must be driven high after the eighth bit of the last data byte has been latched in; otherwise the quad page program (pp) command is not executed. as soon as cs# is driven high, the self-timed quad page program cycle (whose duration is t pp ) is initiated. while the quad page program cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed quad page program cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a quad page program command applied to a page which is protected by the block protect (bp4, bp3, bp2, bp1, and bp0) is not executed. figure 20. quad page program sequence diagram command 0 1 2 3 4 5 6 7 32h cs# sclk 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24-bit address 32 33 34 35 4 0 msb 36 37 38 39 si(io0) so(io1) wp#(io2) hold#(io3) 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 byte1 byte2 cs# sclk si(io0) so(io1) wp#(io2) hold#(io3) 42 43 44 45 41 46 47 40 50 51 52 53 49 54 55 48 536 537 538 539 540 541 542 543 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 byte11 4 0 5 1 6 2 7 3 byte12 4 0 5 1 6 2 7 3 byte253 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 4 0 5 1 6 2 7 3 byte256 28 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7.1 7 . sector erase (se) (20h) the sector erase (se) command is for erasing the all data of the chosen sector. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit. the sector erase (se) command is entered by driving cs# low, followed by the command code, and 3-address byte on si. any address inside the sector is a valid address for the sector erase (se) command. cs# must be driven low for the entire duration of the sequence. the sector erase command sequence: cs# goes low sending sector erase command 3-byte address on si cs# goes high. the command sequence is shown in figure21. cs# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the sector erase (se) command is not executed. as soon as cs# is driven high, the self-timed sector erase cycle (whose duration is t se ) is initiated. while the sector erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed sector erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a sector erase (se) command applied to a sector which is protected by the block protect (bp4, bp3, bp2, bp1, bp0) bit (see table1.) is not executed. figure 21. sector erase sequence diagram command 0 1 2 3 4 5 6 7 20 h cs# s cl k si 8 9 29 30 31 msb 2 1 0 24 bits address 23 22 7. 1 8 . 32kb block erase (be) (52h) the 32kb block erase (be) command is for erasing the all data of the chosen block. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit. the 32kb block erase (be) command is entered by driving cs# low, followed by the command code, and three address bytes on si. any address inside the block is a valid address for the 32kb block erase (be) command. cs# must be driven low for the entire duration of the sequence. the 32kb block erase command sequence: cs# goes low sending 32kb block erase command 3-byte address on si cs# goes high. the command sequence is shown in figure22. cs# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 32kb block erase (be) command is not executed. as soon as cs# is driven high, the self-timed block erase cycle (whose duration is t be ) is initiated. while the block erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed block erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a 32kb block erase (be) command applied to a block which is protected by the block protect (bp4, bp3, bp2, bp1, bp0) bits (see table1.) is not executed. figure 22. 32kb block erase sequence diagram command 0 1 2 3 4 5 6 7 52 h cs# s cl k si 8 9 29 30 31 msb 2 1 0 24 bits address 23 22 29 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7.1 9 . 64kb block erase (be) (d8h) the 64kb block erase (be) command is for erasing the all data of the chosen block. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit. the 64kb block erase (be) command is entered by driving cs# low, followed by the command code, and three address bytes on si. any address inside the block is a valid address for the 64kb block erase (be) command. cs# must be driven low for the entire duration of the sequence. the 64kb block erase command sequence: cs# goes low sending 64kb block erase command 3-byte address on si cs# goes high. the command sequence is shown in figure23. cs# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 64kb block erase (be) command is not executed. as soon as cs# is driven high, the self-timed block erase cycle (whose duration is t be ) is initiated. while the block erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed block erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a 64kb block erase (be) command applied to a block which is protected by the block protect (bp4, bp3, bp2, bp1, bp0) bits (see table1.) is not executed. figure 23. 64kb block erase sequence diagram command 0 1 2 3 4 5 6 7 d8h cs # sc lk si 8 9 29 30 31 msb 2 1 0 24 bits address 23 22 7. 20 . chip erase (ce) (60/c7h) the chip erase (ce) command is for erasing the all data of the chip. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit. the chip erase (ce) command is entered by driving cs# low, followed by the command code on serial data input (si). cs# must be driven low for the entire duration of the sequence. the chip erase command sequence: cs# goes low sending chip erase command cs# goes high. the command sequence is shown in figure24. cs# must be driven high after the eighth bit of the command code has been latched in, otherwise the chip erase command is not executed. as soon as cs# is driven high, the self- timed chip erase cycle (whose duration is t ce ) is initiated. while the chip erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed chip erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. the chip erase (ce) command is executed if the block protect (bp4,bp3,bp2, bp1, bp0) bits are set to none protected. the chip erase (ce) command is ignored if one or more sectors are protected. figure 24. chip erase sequence diagram command 0 1 2 3 4 5 6 7 60h or c7h cs# sc lk si 30 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 21 . deep power-down (dp) (b9h) executing the deep power-down (dp) command is the only way to put the device in the lowest consumption mode (the deep power-down mode). it can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all write, program and erase commands. driving cs# high deselects the device, and puts the device in the standby mode (if there is no internal cycle currently in progress). but this mode is not the deep power-down mode. the deep power-down mode can only be entered by executing the deep power-down (dp) command. once the device has entered the deep power-down mode, all commands are ignored except the release from deep power-down and read device id (rdi) command. this releases the device from this mode. the release from deep power-down and read device id (rdi) command also allows the device id of the device to be output on so. the deep power-down mode automatically stops at power-down, and the device always power-up in the standby mode. the deep power-down (dp) command is entered by driving cs# low, followed by the command code on si. cs# must be driven low for the entire duration of the sequence. the deep power-down command sequence: cs# goes low sending deep power-down command cs# goes high. the command sequence is shown in figure25. cs# must be driven high after the eighth bit of the command code has been latched in; otherwise the deep power-down (dp) command is not executed. as soon as cs# is driven high, it requires a delay of t dp before the supply current is reduced to i cc2 and the deep power- down mode is entered. any deep power-down (dp) command, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. figure 25. deep power-down sequence diagram command 0 1 2 3 4 5 6 7 b9 h c s # s c lk si t dp stand-by mode deep power-down mode 31 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 22 . release from deep power-down or high performance mode and read device id (rdi) (abh) the release from power-down or high performance mode/device id command is a multi-purpose command. it can be used to release the device from the power-down state or high performance mode or obtain the devices electronic identification (id) number. to release the device from the power-down state or high performance mode, the command is issued by driving the cs# pin low, shifting the instruction code abh and driving cs# high as shown in figure26. release from power-down will take the time duration of t res1 (see ac characteristics) before the device will resume normal operation and other command are accepted. the cs# pin must remain high during the t res1 time duration. when used only to obtain the device id while not in the power-down state, the command is initiated by driving the cs# pin low and shifting the instruction code abh followed by 3-dummy byte. the device id bits are then shifted out on the falling edge of sclk with most significant bit (msb) first as shown in figure27. the device id value for the GD25Q21b is listed in manufacturer and device identification table. the device id can be read continuously. the command is completed by driving cs# high. when used to release the device from the power-down state and obtain the device id, the command is the same as previously described, except that after cs# is driven high it must remain high for a time duration of t res2 (see ac characteristics). after this time duration the device will resume normal operation and other command will be accepted. if the release from power-down/device id command is issued while an erase, program or write cycle is in process (when wip equal 1) the command is ignored and will not have any effects on the current cycle. figure 26. release power-down sequence or high performance mode sequence diagram command 0 1 2 3 4 5 6 7 abh cs # sclk si res 1 stand - by mode deep power - down mode t figure 27. release power-down and read device id sequence diagram 32 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 23 . read manufacture id/device id (rems) (90h) the read manufacturer/device id command is an alternative to the release from power-down/device id command that provides both the jedec assigned manufacturer id and the specific device id. the command is initiated by driving the cs# pin low and shifting the command code 90h followed by a 24-bit address (a23-a0) of 000000h. after which, the manufacturer id and the device id are shifted out on the falling edge of sclk with most significant bit (msb) first as shown in figure28. if the 24-bit address is initially set to 000001h, the device id will be read first. figure 28. read manufacture id/device id sequence diagram 33 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 2 4 . read manufacture id/device id dual i/o (92h) the read manufacturer/device id dual i/o command is an alternative to the release from power-down/ device id command that provides both the jedec assigned manufacturer id and the specific device id by dual i/o. the command is initiated by driving the cs# pin low and shifting the command code 92h followed by a 24-bit address (a23-a0) of 000000h. after which, the manufacturer id and the device id are shifted out on the falling edge of sclk with most significant bit (msb) first as shown in figure29. if the 24-bit address is initially set to 000001h, the device id will be read first. figure 29. read manufacture id/device id dual i/o sequence diagram command 0 1 2 3 4 5 6 7 92h cs# sclk si(io0) so(io1) 8 9 10 11 12 13 14 15 6 4 2 0 6 4 2 0 16 17 18 19 20 21 22 23 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 a23-16 a15-8 a7-0 m7-0 cs# 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 si(io0) so(io1) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 sclk mfr id device id 40 41 42 43 6 4 2 0 7 5 3 1 44 45 46 47 6 4 2 0 7 5 3 1 mfr id (repeat) device id (repeat) mfr id (repeat) device id (repeat) 34 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash figure 30. read manufacture id/device id quad i/o sequence diagram command 0 1 2 3 4 5 6 7 94h cs# sclk si(io0) so(io1) 8 9 10 11 12 13 14 15 4 0 4 0 4 0 4 0 16 17 18 19 20 21 22 23 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 a23-16 a15-8 a7-0 m7-0 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 wp#(io2) hold#(io3) dummy mfr id did cs# sclk si(io0) so(io1) wp#(io2) hold#(io3) 24 25 26 27 28 29 30 31 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 mfr id (repeat) did (repeat) 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 mfr id (repeat) did (repeat) 7. 2 5 . read manufacture id/device id quad i/o (94h) the read manufacturer/device id quad i/o command is an alternative to the release from power-down/ device id command that provides both the jedec assigned manufacturer id and the specific device id by quad i/o. the command is initiated by driving the cs# pin low and shifting the command code 94h followed by a 24-bit address (a23-a0) of 000000h. after which, the manufacturer id and the device id are shifted out on the falling edge of sclk with most significant bit (msb) first as shown in figure30. if the 24-bit address is initially set to 000001h, the device id will be read first. 35 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 26 . read identification (rdid) (9fh) the read identification (rdid) command allows the 8-bit manufacturer identification to be read, followed by two bytes of device identification. the device identification indicates the memory type in the first byte, and the memory capacity of the device in the second byte. any read identification (rdid) command while an erase or program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. the read identification (rdid) command should not be issued while the device is in deep power-down mode. the device is first selected by driving cs# to low. then, the 8-bit command code for the command is shifted in. this is followed by the 24-bit device identification, stored in the memory, being shifted out on serial data output, each bit being shifted out during the falling edge of serial clock. the command sequence is shown in figure31. the read identification (rdid) command is terminated by driving cs# to high at any time during data output. when cs# is driven high, the device is put in the standby mode. once in the standby mode, the device waits to be selected, so that it can receive, decode and execute commands. figure 31. read identification id sequence diagram 0 1 2 3 4 5 6 7 cs # sclk si so 8 9 10 msb 18 19 20 21 17 6 5 4 3 2 1 0 22 23 16 26 27 28 29 25 30 31 24 7 capacity id 7- id 0 cs # sclk si so msb memory type id 15 - id 8 6 5 4 3 2 1 0 7 11 12 13 14 15 9 fh 6 5 4 3 2 1 0 7 manufacturer id msb 36 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 2 7 . high performance mode (hpm) (a3h) it is recommended to execute high performance mode (hpm) command prior to dual or quad i/o commands when operating at high frequencies (see f c in ac electrical characteristics). this command allows pre-charging of internal charge pumps so the voltages required for accessing the flash memory array are readily available. the command sequence: cs# goes low sending a3h command sending 3-dummy byte cs# goes high. see figure32. after the hpm command is executed, the device will maintain a slightly higher standby current (icc8) than standard spi operation. the release from power-down or hpm command (abh) can be used to return to standard spi standby current (icc1). in addition, power-down command (b9h) will also release the device from hpm mode back to deep power down state. figure 32. high performance mode sequence diagram command 0 1 2 3 4 5 6 7 a3h cs # sclk si 8 9 29 30 31 msb 2 1 0 3 dummy bytes 23 22 so high performance mode hpm t 7. 2 8 . erase security registers (44h) the GD25Q21b provides three 512-byte security registers which can be erased and programmed individually. these registers may be used by the system manufacturers to store security and other important information separately from the main memory array. the erase security registers command is similar to sector/block erase command. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit. the erase security registers command sequence: cs# goes low sending erase security registers command cs# goes high. the command sequence is shown below. cs# must be driven high after the eighth bit of the command code has been latched in; otherwise the erase security registers command is not executed. as soon as cs# is driven high, the self-timed erase security registers cycle (whose duration is t se ) is initiated. while the erase security registers cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed erase security registers cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. the security registers lock bit (lb3-1) in the status register can be used to otp protect the security registers. once the lb bit is set to 1, the security registers will be permanently locked; the erase security registers command will be ignored. address a23-16 a15-12 a11-9 a8-0 security register #1 00h 0 0 0 1 0 0 0 do not care security register #2 00h 0 0 1 0 0 0 0 do not care security register #3 00h 0 0 1 1 0 0 0 do not care 37 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash figure 33. erase security registers command sequence diagram command 0 1 2 3 4 5 6 7 44 h cs # sclk si 8 9 29 30 31 msb 2 1 0 24 bits address 23 22 7. 2 9 . program security registers (42h) the program security registers command is similar to the page program command. it allows from 1 to 512 bytes security registers data to be programmed. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit before sending the program security registers command. the program security registers command is entered by driving cs# low, followed by the command code (42h), three address bytes and at least one data byte on si. as soon as cs# is driven high, the self-timed program security registers cycle (whose duration is t pp ) is initiated. while the program security registers cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed program security registers cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. if the security registers lock bit (lb3-1) is set to 1, the security registers will be permanently locked. program security registers command will be ignored. address a23-16 a15-12 a11-9 a8-0 security register #1 00h 0 0 0 1 0 0 0 byte address security register #2 00h 0 0 1 0 0 0 0 byte address security register #3 00h 0 0 1 1 0 0 0 byte address figure 34. program security registers command sequence diagram command 0 1 2 3 4 5 6 7 42 h cs # sclk si 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24 - bit address 42 43 44 45 41 46 47 40 50 51 52 53 49 54 55 48 6 5 4 3 2 1 0 7 cs # sclk si msb data byte 2 32 33 34 35 7 6 5 4 3 2 1 0 msb 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 data byte 1 data byte 3 data byte 256 msb msb msb 36 37 38 39 2072 2073 2074 2075 2076 2077 2078 2079 38 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 30 . read security registers (48h) the read security registers command is similar to fast read command. the command is followed by a 3-byte address (a23-a0) and a dummy byte, each bit being latched-in during the rising edge of sclk. then the memory content, at that address, is shifted out on so, each bit being shifted out, at a max frequency f c , during the falling edge of sclk. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. once the a8-a0 address reaches the last byte of the register (byte 1ffh), it will reset to 000h, the command is completed by driving cs# high. address a23-16 a15-12 a11-9 a8-0 security register #1 00h 0 0 0 1 0 0 0 byte address security register #2 00h 0 0 1 0 0 0 0 byte address security register #3 00h 0 0 1 1 0 0 0 byte address figure 35. read security registers command sequence diagram command 0 1 2 3 4 5 6 7 48 h cs # sclk si so high -z 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24 - bit address msb 34 35 36 37 33 6 5 4 3 2 1 0 38 39 data out 1 32 42 43 44 45 41 46 47 40 7 6 5 4 3 2 1 0 7 6 5 7 data out 2 cs # sclk si so msb dummy byte 39 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 31 . continuous read mode reset (crmr) (ffh) the dual/quad i/o fast read operations, continuous read mode bits (m7-0) are implemented to further reduce command overhead. by setting the (m7-0) to axh, the next dual/quad i/o fast read operations do not require the bbh/ebh/e7h command code. if the system controller is reset during operation it will likely send a standard spi command, such as read id (9fh) or fast read (0bh), to the device. because the GD25Q21b has no hardware reset pin, so if continuous read mode bits are set to axh, the GD25Q21b will not recognize any standard spi commands. so continuous read mode reset command will release the continuous read mode from the axh state and allow standard spi command to be recognized. the command sequence is show below. figure 36. continuous read mode reset sequence diagram 0 1 2 3 4 5 6 7 cs # sclk si( io 0) so( io 1) wp #( io 2) hold #( io 3) ffh mode bit reset for quad / dual i /o don ` t care don ` t care don ` t care 7. 3 2 . program/erase suspend (pes) (75h) the erase/program suspend instruction 75h, allows the system to interrupt a sector/block erase or page program operation and then read data from any other sector or block. the write status register command (01h), page program command (02h) and erase commands (20h, 52h, d8h, c7h, 60h) are not allowed during suspend. erase/program suspend is valid only during the sector/block erase or page program operation. a maximum of time of tsus (see ac characteristics) is required to suspend the program/erase operation. while the erase/program suspend cycle is in progress, the read status register command may still be accessed for checking the status of the busy bit. the busy bit is a 1 during the erase/program suspend cycle and becomes a 0 when the cycle is finished and the device is ready to accept read command. a power-off during the suspend period will reset the device and release the suspend state. the command sequence is show below. figure 37. program/erase suspend sequence diagram command 0 1 2 3 4 5 6 7 75 h cs # sclk si so high -z tsus accept read command 40 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 7. 3 3 . program/erase resume (per) (7ah) the program/erase resume command must be written to resume the sector/block erase or program operation after a program/erase suspend command. after issued the busy bit in the status register will be set to 1 and the sector/block erase or program operation will completed. the program/erase resume command will be ignored unless a program/erase suspend is active. the command sequence is show below. figure 38. program/erase resume sequence diagram command 0 1 2 3 4 5 6 7 7ah cs# sclk si so resume erase/program 41 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 8.1 . power-on timing symbol parameter min typ max unit tvsl vcc(min) to cs# low 10 us tpuw time delay before write instruction 1 10 ms vwi write inhibit voltage 2.1 2.3 2.5 v table3. power-up timing and write inhibit threshold 8. electrical characteristics 8 . 2 . initial delivery state the device is delivered with the memory array erased: all bits are set to 1(each byte contains ffh). the status register contains 00h (all status register bits are 0). 8 . 3 . data retention and endurance parameter test condition min unit minimum pattern data retention time 150c 10 years 125c 2 0 years erase/program endurance -40 to 85c 100k cycles 8 . 4 . latch up characteristics parameter min max input voltage respect to vss on i/o pins -1.0v vcc+1.0v vcc current -100ma 100ma figure 39. power-on timing sequence diagram 42 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 8 . 5 . absolute maximum ratings parameter value unit ambient operating temperature -40 to 85 c storage temperature -65 to 150 c output short circuit current 200 ma applied input/output voltage -0.5 to 4.0 v v cc -0.5 to 4.0 v 0.8v cc 0.1v cc 0.7v cc 0.2v cc 0.5v cc ac measurement level i nput timing reference level output timing re f erence level note : input pulse rise and fall time are <5ns 8 . 6 . capacitance measurement conditions symbol parameter min typ max unit conditions cin input capacitance 6 pf vin=0v cout output capacitance 8 pf vout=0v c l load capacitance 30 pf input rise and fall time 5 ns input pulse voltage 0.1vcc to 0.8vcc v input timing reference voltage 0.2vcc to 0.7vcc v output timing reference voltage 0.5vcc v figure 40. input test wave form and measurement level maximum negative overshoot waveform maximum positive overshoot waveform vss 20ns 20ns 20ns vss-2.0v vc c 20ns 20ns 20ns vcc + 2.0v 43 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 8. 7 . dc characteristics symbol parameter test condition min. typ. max. unit. i li input leakage current 2 a i l o output leakage current 2 a i cc1 standby current cs#=vcc, v in =vcc or vss 20 30 a i cc 2 deep power-down current cs#=vcc, v in =vcc or vss 1 5 a i cc 3 operating current (read) clk=0.1vcc/0.9vcc at 104mhz, q=open(*1,*2,*4 i/o) 15 ma clk=0.1vcc/0.9vcc at 80mhz, q=open(*1,*2,*4 i/o) 12 ma clk=0.1vcc/0.9vcc at 33mhz, q=open(*1,*2,*4 i/o) 6 ma i cc 4 operating current (pp) cs#=vcc 10 15 ma i cc 5 operating current (wrsr) cs#=vcc 8 12 ma i cc 6 operating current (se) cs#=vcc 10 15 ma i cc 7 operating current (be) cs#=vcc 10 15 ma i cc 8 operating current (ce) 10 15 ma i cc 9 high performance current 400 600 a v i l input low voltage -0.5 0.2vcc v v i h input high voltage 0.7vcc vcc+0.4 v v ol output low voltage i ol =1.6ma 0.4 v v o h output high voltage i oh =-100 a vcc-0.2 v (t= -40 c ~85 c , vcc=2.7~3.6v ) 44 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 8. 8 . ac characteristics symbol parameter min. typ. max. unit. f c serial clock frequency for: fast_read, pp, se, be, dp, res, wren, wrdi, wrsr, rdsr, rdid (*1,*2,*4 i/o) dc. 104 mhz f r serial clock frequency for: read dc. 80 mhz t clh serial clock high time 3.5 ns t c ll serial clock low time 3.5 ns t clc h serial clock rise time (slew rate) 0.2 v/ns t chc l serial clock fall time (slew rate) 0.2 v/ns t slc h cs# active setup time 5 ns t chsh cs# active hold time 5 ns t s h ch cs# not active setup time 5 ns t c h sl cs# not active hold time 5 ns t shsl cs# high time (read/write) 20 ns t sh qz output disable time 6 ns t cl q x output hold time 1.2 ns t dvch data in setup time 2 ns t chdx data in hold time 5 ns t hlch hold# low setup time (relative to clock) 3.5 ns t hhch hold# high setup time (relative to clock) 3.5 ns t chhl hold# high hold time (relative to clock) 3.5 ns t chh h hold# low hold time (relative to clock) 3.5 ns t hl qz hold# low to high-z output 6 ns t h h q x hold# low to low-z output 6 ns t clq v clock low to output valid 6 ns t whsl write protect setup time before cs# low 20 ns t s hwl write protect hold time after cs# high 100 ns t dp cs# high to deep power-down mode 0.1 s t res1 cs# high to standby mode without electronic signature read 5 s t res 2 cs# high to standby mode with electronic signature read 5 s t h pm cs# high to high performance mode 0.2 s t sus cs# high to next command after suspend 20 s t w write status register cycle time 10 3 0 ms t pp page programming time 0.35 2.4 ms t se sector erase time 5 0 200/400(1) ms t be block erase time(32k/64k) 0.18/0.25 0.6/0.8 s t ce chip erase time 0.8 1.5 s (t= -40 c ~85 c , vcc=2.7~3.6v, c l =30pf) note: (1). max value t se with <50k cycles is 200 ms and >50k & <100k cycles is 400 ms. 45 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash figure41. serial input timing sclk cs# si msb so high-z lsb tchsl tslch tdvch tchdx tshch tchsh tchcl tclch tshsl figure42. output timing cs # sclk so si least significant address bit ( lib ) in tclqv tclqx tclqx tclqv tclh tcll tshqz lsb figure43. hold timing cs # sclk so hold # tchhl thlqz thlch tchhh thhch thhqx si do not care during hold operation . 46 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 9 . ordering information packing type y: tray r: tape & reel green code g: pb free & haloge n free green package temperature range i: industrial(-40 c to +85 c) package type t : sop8 150mil s : sop8 208mil u: uson8 (32mm) generation b : version density 21 : 2mb series q : 2.7~3.6v, 4kb uniform sector, quad i/o product family 25 : serial flash gd 25 q 21 b x i g x 47 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 10.1 package sop8 150mil 10 . package information 1 4 5 8 e1 e d a a2 a1 e b l l1 c ? seating plane 0. 10 symbol a a1 a2 b c d e e1 e l l1 ? unit mm min 1.35 0.05 1.35 0.31 0.15 4.77 5.80 3.80 - 0.40 0.85 0 6 11 nom - - - - - 4.90 6.00 3.90 1.27 - 1.06 - 7 12 max 1.75 0.25 1.55 0.51 0.25 5.03 6.20 4.00 - 0.90 1.27 8 8 13 inch min 0.053 0.002 0.053 0.012 0.006 0.188 0.228 0.149 - 0.016 0.033 0 6 11 nom - - - 0.016 - 0.193 0.236 0.154 0.050 0 0.042 - 7 12 max 0.069 0.010 0.061 0.020 0.010 0.198 0.244 0.158 - 0.035 0.050 8 8 13 dimensions note: both package length and width do not include mold flash. 48 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 10.2 package sop8 208mil 1 4 5 8 e1 e d a a2 a1 e b l l1 c ? symbol a a1 a2 b c d e e1 e l l1 unit mm min - 0.05 1.70 0.31 0.18 5.13 7.70 5.18 - 0.50 1.21 0 nom - 0.15 1.80 0.41 0.21 5.23 7.90 5.28 1.27 0.67 1.31 5 max 2.16 0.25 1.91 0.51 0.25 5.33 8.10 5.38 - 0.85 1.41 8 inch min - 0.002 0.067 0.012 0.007 0.202 0.303 0.204 - 0.020 0.048 0 nom - 0.006 0.071 0.016 0.008 0.206 0.311 0.208 0.050 0.026 0.052 5 max 0.085 0.010 0.075 0.020 0.010 0.210 0.319 0.212 - 0.033 0.056 8 dimensions note: both package length and width do not include mold flash. 49 r ev.1. 1 4 9 - http://www.elm-tech.com GD25Q21bxigx uni form sector dual and quad serial flash 10.3 package uson8 (3 2mm) symbol a a1 a2 b d d1 e e1 e y l unit mm min 0.50 - 0.13 0.18 2.90 0.15 1.90 1.50 - 0.00 0.30 nom 0.55 - 0.15 0.25 3.00 0.20 2.00 1.60 0.50 - 0.35 max 0.60 0.05 0.18 0.30 3.10 0.30 2.10 1.70 - 0.05 0.45 inch min 0.020 - 0.005 0.007 0.114 0.006 0.075 0.059 - 0.000 0.012 nom 0.022 - 0.006 0.010 0.118 0.008 0.079 0.063 0.020 - 0.014 max 0.024 0.002 0.007 0.012 0.122 0.012 0.083 0.067 - 0.002 0.018 dimensions note: both package length and width do not include mold flash. d e t o p v i e w d 1 e 1 b e b o t t o m v i e w l 1 a 2 a 1 a s i d e v i e w y |
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